VNP5N07FI(2008) Ver la hoja de datos (PDF) - STMicroelectronics

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VNP5N07FI
(Rev.:2008)

OMNIFET II fully autoprotected Power MOSFET

STMicroelectronics 

VND5N07

2.3

Electrical characteristics

Tcase = 25°C unless otherwise stated.

Table 4. Off

Symbol

Parameter

Test conditions

Drain-Source clamp

VCLAMP voltage

VIN = 0V; ID = 200mA

VCLTH

IISS

VINCL

IDSS

Drain-Source

threshold voltage

VIN = 0V; ID = 2mA

Supply current from

input pin

VDS = 0V; VIN = 10V

Input-Source reverse

clamp voltage

IIN = 1mA

Zero input voltage

drain current

(VIN=0V)

VDS = 13V; VIN = 0V;

VDS = 25V; VIN = 0V

Electrical specifications

Min. Typ. Max. Unit

60 70 80 V

55

V

250 500 µA

-1.0

-0.3 V

50 µA

200 µA

Table 5. On(1)

Symbol

Parameter

Test conditions

RDS(on)

Static Drain-Source

on resistance

VIN(th)

Input threshold

voltage

VIN =10V; ID = 2.5A;

VIN = 5V; ID = 2.5A

VDS = Vin; ID + Iin = 1 mA

1. Pulsed: pulse duration = 300µs, duty cycle 1.5%.

Min. Typ. Max. Unit

200

mΩ

280

0.8

3

V

Table 6. Dynamic

Symbol

Parameter

Test conditions

gfs (1)

Forward

transconductance

VDS = 13V; ID = 2.5A

COSS Output capacitance VDS = 13V; f = 1MHz; VIN = 0V

1. Pulsed: pulse duration = 300µs, duty cycle 1.5%.

Min. Typ. Max. Unit

3

4

S

200 300 pF

7/24

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