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VND5N07

OMNIFET II fully autoprotected Power MOSFET

STMicroelectronics 

Electrical specifications

2

Electrical specifications

VND5N07

2.1

Absolute maximum ratings

Stressing the device above the rating listed in the “Absolute maximum ratings” table may

cause permanent damage to the device. These are stress ratings only and operation of the

device at these or any other conditions above those indicated in the operating sections of

this specification is not implied. Exposure to Absolute maximum rating conditions for

extended periods may affect device reliability. Refer also to the STMicroelectronics SURE

program and other relevant quality document.

Obsolete Product(s) - Obsolete Product(s) 2.2

Table 2. Absolute maximum ratings

Symbol

Parameter

VDSn

VINn

IDn

IRn

VESD

Ptot

Tj

Tc

Tstg

Drain-Source voltage (VINn = 0V)

Input voltage

Drain current

Reverse DC output current

Electrostatic discharge (R = 1.5KΩ,

C = 100pF)

Total dissipation at Tc = 25°C

Operating junction temperature

Case operating temperature

Storage temperature

Value

Unit

DPAK / IPAK ISOWATT220 SOT-82FM

Internally clamped

V

18

V

Internally limited

A

-7

A

2000

V

60

24

9

W

Internally limited

°C

Internally limited

°C

-55 to 150

°C

Thermal data

Table 3. Thermal data

Symbol

Parameter

Rthj-case Thermal resistance junction-case

Max. value

Unit

DPAK / IPAK ISOWATT220 SOT-82FM

3.75

5.2

14

°C/W

Rthj-amb Thermal resistance junction-ambient

100

62.5

100

°C/W

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