STW45NM50 Ver la hoja de datos (PDF) - STMicroelectronics
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STW45NM50 Datasheet PDF : 8 Pages
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STW45NM50
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
Symbol
Parameter
Test Conditions
td(on)
tr
Turn-on Delay Time
Rise Time
VDD = 250V, ID = 22.5 A
RG = 4.7Ω VGS = 10 V
(see test circuit, Figure 3)
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDD = 400 V, ID = 45 A,
VGS = 10 V
Qgd
Gate-Drain Charge
SWITCHING OFF
Symbol
Parameter
tr(Voff)
Off-voltage Rise Time
tf
Fall Time
tc
Cross-over Time
Test Conditions
VDD = 400 V, ID = 45 A,
RG = 4.7Ω, VGS = 10 V
(see test circuit, Figure 5)
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
ISD
Source-drain Current
ISDM (2) Source-drain Current (pulsed)
VSD (1) Forward On Voltage
ISD = 45 A, VGS = 0
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 40 A, di/dt = 100A/µs,
VDD = 100 V, Tj = 25°C
(see test circuit, Figure 5)
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 40 A, di/dt = 100A/µs,
VDD = 100 V, Tj = 150°C
(see test circuit, Figure 5)
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
Min. Typ. Max. Unit
40
ns
35
ns
87
117
nC
23
nC
42
nC
Min. Typ. Max. Unit
18
ns
23
ns
44
ns
Min. Typ. Max. Unit
45
A
180
A
1.5
V
520
ns
7.8
µC
30
A
680
ns
11.2
µC
33
A
Safe Operating Area
Thermal Impedence
3/8
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