IRFP460 Ver la hoja de datos (PDF) - IXYS CORPORATION
Número de pieza
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Lista de partido
IRFP460 Datasheet PDF : 4 Pages
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IRFP 460
Symbol
g
fs
Ciss
C
oss
Crss
td(on)
tr
t
d(off)
tf
Qg(on)
Q
gs
Qgd
R
thJC
RthCK
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
V = 10 V; I = 12 A, pulse test
DS
D
V = 0 V, V = 25 V, f = 1 MHz
GS
DS
VGS = 10 V, VDS = 250 V, ID = 20 A
R
G
=
4.3
Ω,
(External)
V = 10 V, V = 200 V, I = 20 A
GS
DS
D
13 21
S
4200
pF
450
pF
135
pF
23 35 ns
81 120 ns
85 130 ns
65 98 ns
135 210 nC
28 40 nC
62 110 nC
0.45 K/W
0.25
K/W
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
(T
J
=
25°C,
unless
otherwise
specified)
min. typ. max.
IS
VGS = 0 V
ISM
Repetitive; pulse width limited by TJM
VSD
IF = 20 A, VGS = 0 V,
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
trr
IF = 20 A, -di/dt = 100 A/µs, VR = 100 V
Q
rr
20 A
80 A
1.8 V
570 860 ns
5.7
µC
TO-247 AD Outline
123
Terminals: 1 - Gate
2 - Drain
3 - Source Tab - Drain
Dim. Millimeter
Min. Max.
A
4.7 5.3
A1
2.2 2.54
A2
2.2 2.6
b
1.0 1.4
b1 1.65 2.13
b2 2.87 3.12
C
.4
.8
D 20.80 21.46
E 15.75 16.26
e 5.20 5.72
L 19.81 20.32
L1
4.50
∅ P 3.55 3.65
Q 5.89 6.40
R 4.32 5.49
S 6.15 BSC
Inches
Min. Max.
.185 .209
.087 .102
.059 .098
.040 .055
.065 .084
.113 .123
.016 .031
.819 .845
.610 .640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
242 BSC
© 2000 IXYS All rights reserved
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
2-4
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