STW13NM60N Ver la hoja de datos (PDF) - STMicroelectronics

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STW13NM60N

N-channel 600 V, 0.28 Ω typ., 11 A MDmesh™ II Power MOSFET in TO-220FP, I²PAK, TO-220, IPAK, TO-247 packages

STMicroelectronics 

STF/I/P/U/W13NM60N

1

Electrical ratings

Electrical ratings

Table 2. Absolute maximum ratings

Symbol

Parameter

Value

Unit

TO-220FP I²PAK, TO-220, IPAK, TO-247

VDS Drain-source voltage

VGS Gate-source voltage

Drain current (continuous) at

ID

TC = 25 °C

ID

IDM (2)

Drain current (continuous) at

TC = 100 °C

Drain current (pulsed)

PTOT Total dissipation at TC = 25 °C

dv/dt (3) Peak diode recovery voltage slope

11(1)

6.93(1)

44(1)

25

600

± 25

11

6.93

44

90

15

VISO

Tstg

Tj

Insulation withstand voltage (RMS)

from all three leads to external heat

sink (t=1 s;TC=25 °C)

Storage temperature

Max. operating junction temperature

2500

- 55 to 150

150

1. Limited by maximum junction temperature

2. Pulse width limited by safe operating area

3. ISD ≤ 11 A, di/dt ≤ 400 A/µs, VDS peak ≤ V(BR)DSS, VDD = 80% V(BR)DSS.

V

V

A

A

A

W

V/ns

V

°C

°C

Table 3. Thermal data

Value

Symbol

Parameter

I²PAK

TO-220FP

TO-220

Unit

IPAK TO-247

Rthj-case Thermal resistance junction-case max

Rthj-amb

Thermal resistance junction-ambient

max

5

62.5

1.39

62.5

100

°C/W

50 °C/W

Table 4. Avalanche characteristics

Symbol

Parameter

IAS

Avalanche current, repetitive or not-repetitive

(pulse width limited by Tj max)

Single pulse avalanche energy

EAS (starting TJ=25 °C, ID=IAS, VDD=50 V)

Value

Unit

3.5

A

200

mJ

Doc ID 15420 Rev 5

3/21

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