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CT90AM-18

INSULATED GATE BIPOLAR TRANSISTOR

MITSUBISHI ELECTRIC  

MITSUBISHI Nch IGBT

CT90AM-18

INSULATED GATE BIPOLAR TRANSISTOR

ELECTRICAL CHARACTERISTICS (Tj = 25°C)

Symbol

Parameter

Test conditions

ICES

IGES

VGE (th)

VCE (sat)

Cies

Coes

Cres

td (on)

tr

td (off)

tf

Etail

Itail

VEC

trr

Rth (ch-c)

Rth (ch-c)

Collector-emitter leakage current

Gate-emitter leakage current

Gate-emitter threshold voltage

Collector-emitter saturation voltage

Input capacitance

Output capacitance

Reverse transfer capacitance

Turn-on delay time

Turn-on rise time

Turn-off delay time

Turn-off fall time

Tail loss

Tail current

Emitter-collector voltage

Diode reverse recovery time

Thermal resistance

Thermal resistance

VCE = 900V, VGE = 0V

VGE = ±20V, VCE = 0V

VCE = 10V, IC = 6mA

IC = 60A, VGE = 15V

VCE = 25V, VGE = 0V, f = 1MHz

VCC = 300V, IC = 60A, VGE = 15V, RG = 0Ω

ICP = 60A, Tj = 125°C, dv/dt = 200V/µs

IE = 60A, VGE = 0V

IE = 60A, dis/dt = –20A/µs

Junction to case

Junction to case

Limits

Unit

Min.

Typ.

Max.

—

—

1.0

mA

—

—

±0.5 µA

2.0

4.0

6.0

V

—

1.55 1.95

V

—

11000

—

pF

—

180

—

pF

—

125

—

pF

—

0.05

—

µs

—

0.10

—

µs

—

0.20

—

µs

—

0.30

—

µs

—

0.6

1.0 mJ/pls

—

6

12

A

—

—

3.0

V

—

0.5

2.0

µs

—

—

0.5 °C/W

—

—

4.0 °C/W

Sep. 2000

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