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P4C1024

HIGH SPEED 128K x 8 CMOS STATIC RAM

Performance Semiconductor 

P4C1024

RECOMMENDED OPERATING TEMPERATURE & SUPPLY VOLTAGE

Temperature Range (Ambient)

Commercial (0°C to 70°C)

Industrial (-40°C to 85°C)

Supply Voltage

4.5V ≤ VCC ≤ 5.5V

4.5 ≤ VCC ≤ 5.5V

MAXIMUM RATINGS

Stresses greater than those listed can cause permanent damage to the device. These are absolute stress

ratings only. Functional operation of the device is not implied at these or any other conditions in excess of those

given in the operational sections of this data sheet. Exposure to Maximum Ratings for extended periods can

adversely affect device reliability.

Symbol

VCC

VTERM

T

A

S

TG

IOUT

ILAT

Parameter

Supply Voltage with Respect to GND

Terminal Voltage with Respect to GND (up to 7.0V)

Operating Ambient Temperature

Storage Temperature

Output Current into Low Outputs

Latch-up Current

Min

-0.5

-0.5

-55

-65

>200

Max

Unit

7.0

V

VCC + 0.5

V

125

°C

150

°C

25

mA

mA

DC ELECTRICAL CHARACTERISTICS

(Over Recommended Operating Temperature & Supply Voltage)

Symbol

Parameter

Test Conditions

Min

VOH

Output High Voltage

IOH = –4mA, VCC = 4.5V

2.4

(I/O0 - I/O7)

VOL

Output Low Voltage

(I/O0 - I/O7)

IOL = 8 mA

IOL = 10 mA

VIH

Input High Voltage

2.2

VIL

Input Low Voltage

ILI

Input Leakage Current GND ≤ VIN ≤ VCC

-0.5

Ind'l. -10

Com'l. -5

ILO

Output Leakage Current GND ≤ VOUT ≤ VCC

Ind'l. -10

CE

1

≥

VIH

or

CE2

≤

VIL

Com'l.

-5

I

Output Short-Circuit

OS

Current

V = GND, V = Max (Single

OUT

CC

output) not to exceed 30 second

duration

ISB1

VCC Current

VCC = 5.5V, IOUT = 0 mA

CMOS Standby Current

(CMOS Input Levels)

CE

1

≥

VCC

-0.2V,

CE2

≤

0.2V

Max

0.4

0.5

VCC + 0.3

0.8

+10

+5

+10

+5

-350

20

(Standard)

Unit

V

V

V

V

V

µA

µA

mA

mA

142

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