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IRF320

2.8A and 3.3A, 350V and 400V, 1.8 and 2.5 Ohm, N-Channel Power MOSFETs

Harris Semiconductor 

Semiconductor

July 1998

IRF320, IRF321,

IRF322, IRF323

2.8A and 3.3A, 350V and 400V, 1.8 and 2.5 Ohm,

N-Channel Power MOSFETs

Features

• 2.8A and 3.3A, 350V and 400V

• rDS(ON) = 1.8Ω and 2.5Ω

• Single Pulse Avalanche Energy Rated

• SOA is Power Dissipation Limited

• Nanosecond Switching Speeds

• Linear Transfer Characteristics

• High Input Impedance

• Majority Carrier Device

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount

Components to PC Boards”

Ordering Information

PART NUMBER

PACKAGE

BRAND

IRF320

TO-204AA

IRF320

IRF321

TO-204AA

IRF321

IRF322

TO-204AA

IRF322

IRF323

TO-204AA

IRF323

NOTE: When ordering, use the entire part number.

Description

These are N-Channel enhancement mode silicon gate

power field effect transistors. They are advanced power

MOSFETs designed, tested, and guaranteed to withstand a

specified level of energy in the breakdown avalanche mode

of operation. All of these power MOSFETs are designed for

applications such as switching regulators, switching conver-

tors, motor drivers, relay drivers, and drivers for high power

bipolar switching transistors requiring high speed and low

gate drive power. These types can be operated directly from

integrated circuits.

Formerly developmental type TA17404.

Symbol

D

G

S

Packaging

DRAIN

(FLANGE)

JEDEC TO-204AA

GATE (PIN 1)

SOURCE (PIN 2)

CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.

Copyright © Harris Corporation 1998

5-1

File Number 1569.3

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