K9F1208Q0A Ver la hoja de datos (PDF) - Samsung

Número de pieza

componentes Descripción

Lista de partido

K9F1208Q0A

32M x 8 Bit , 16M x 16 Bit NAND Flash Memory

Samsung 

K9F5608U0C-VCB0,VIB0,FCB0,FIB0

K9F5608Q0C-DCB0,DIB0,HCB0,HIB0

K9F5608U0C-YCB0,YIB0,PCB0,PIB0

K9F5608U0C-DCB0,DIB0,HCB0,HIB0

K9F5616Q0C-DCB0,DIB0,HCB0,HIB0

K9F5616U0C-YCB0,YIB0,PCB0,PIB0

K9F5616U0C-DCB0,DIB0,HCB0,HIB0

FLASH MEMORY

Figure 1-2. K9F5616X0C (X16) FUNCTIONAL BLOCK DIAGRAM

VCC

VSS

A9 - A24

A0 - A7

X-Buffers

Latches

& Decoders

Y-Buffers

Latches

& Decoders

256M + 8M Bit

NAND Flash

ARRAY

(256 + 8)Word x 65536

Command

Command

Register

Page Register & S/A

Y-Gating

I/O Buffers & Latches

CE

Control Logic

RE

& High Voltage

WE

Generator

Global Buffers

Output

Driver

VCC/VCCQ

VSS

I/0 0

I/0 15

CLE ALE WP

Figure 2-2. K9F5616X0C (X16) ARRAY ORGANIZATION

1 Block =32 Pages

= (8K + 256) Word

64K Pages

(=2,048 Blocks)

Page Register

(=256 Words)

256Word

8 Word

1 Page = 264 Word

1 Block = 264 Word x 32 Pages

= (8K + 256) Word

1 Device = 264Words x 32Pages x 2048 Blocks

= 264 Mbits

16 bit

Page Register

256 Word

8 Word

I/O 0 ~ I/O 15

I/O 0 I/O 1 I/O 2 I/O 3 I/O 4

1st Cycle

A0

A1

A2

A3

A4

2nd Cycle A9

A10

A11

A12

A13

3rd Cycle A17

A18

A19

A20

A21

NOTE : Column Address : Starting Address of the Register.

* L must be set to "Low".

I/O 5

A5

A14

A22

I/O 6

A6

A15

A23

I/O 7

A7

A16

A24

I/O8 to 15

L*

Column Address

L*

Row Address

(Page Address)

L*

8

Share Link: