BSM300GA170DN2E3166 Ver la hoja de datos (PDF) - Infineon Technologies
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BSM300GA170DN2E3166 Datasheet PDF : 9 Pages
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BSM300GA170DN2 E3166
Forward characteristics of fast recovery
reverse diode IF = f(VF)
parameter: Tj
600
A
500
IF
450
Tj=125°C
Tj=25°C
400
350
300
250
200
150
100
50
0
0.0 0.5 1.0 1.5 2.0 2.5
V 3.5
VF
Transient thermal impedance
Zth JC = ƒ(tp)
parameter: D = tp / T
Diode
10 0
K/W
10 -1
ZthJC
10 -2
10 -3
10 -4
single pulse
D = 0.50
0.20
0.10
0.05
0.02
0.01
10 -5
10 -5
10 -4
10 -3
10 -2
10 -1
tp
s 10 0
Semiconductor Group
8
Jul-31-1996
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