30BQ100TR(2002) Ver la hoja de datos (PDF) - International Rectifier
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30BQ100TR Datasheet PDF : 6 Pages
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30BQ100
Bulletin PD-2.441 rev. F 05/02
Voltage Ratings
Part number
VR Max. DC Reverse Voltage (V)
VRWM Max. Working Peak Reverse Voltage (V)
Absolute Maximum Ratings
30BQ100
100
Parameters
30BQ Units Conditions
IF(AV) Max. Average Forward Current
IFSM Max. Peak One Cycle Non-Repetitive
Surge Current
EAS Non Repetitive Avalanche Energy
IAR Repetitive Avalanche Current
3.0
4.0
2100
100
5
0.3
Electrical Specifications
A 50% duty cycle @ TL = 148 °C, rectangular wave form
50% duty cycle @ TL = 138 °C, rectangular wave form
A 5µs Sine or 3µs Rect. pulse Following any rated
load condition and
10ms Sine or 6ms Rect. pulse with rated VRRMapplied
mJ TJ = 25 °C, IAS = 2.8A, L = 10mH
A Current decaying linearly to zero in 1 µsec
Frequency limited by T max. Va = 1.5 x Vr typical
J
Parameters
30BQ Units Conditions
VFM Max. Forward Voltage Drop (1) 0.79
0.90
0.62
0.70
V @ 3A
V @ 6A
V @ 3A
V @ 6A
TJ = 25 °C
TJ = 125 °C
IRM Max. Reverse Leakage Current (1)
0.5
5.0
mA TJ = 25 °C
mA TJ = 125 °C
VR = rated VR
CT Max. Junction Capacitance
LS Typical Series Inductance
dv/dt Max. Voltage Rate of Change
115
3.0
10000
pF VR = 5VDC (test signal range 100KHz to 1Mhz) 25°C
nH Measured lead to lead 5mm from package body
V/µs (Rated VR)
(1) Pulse Width < 300µs, Duty Cycle < 2%
Thermal-Mechanical Specifications
Parameters
30BQ Units
Conditions
TJ Max. Junction Temperature Range (*) - 55 to 175 °C
Tstg Max. Storage Temperature Range - 55 to 175 °C
RthJL Max. Thermal Resistance
Junction to Lead
12
(**)
°C/W
RthJA Max. Thermal Resistance
Junction to Ambient
46 °C/W
DC operation
DC operation
wt Approximate Weight
0.24(0.008) g (oz.)
Case Style
SMC
Similar to DO-214AB
Device Marking
IR3J
(*) dPtot
1
<
thermal runaway condition for a diode on its own heatsink
dTj Rth( j-a)
(**) Mounted 1 inch square PCB
2
www.irf.com
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