RMDA1840 Ver la hoja de datos (PDF) - Raytheon Company
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RMDA1840 Datasheet PDF : 7 Pages
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RMDA1840
18-40 GHz Broad Band Driver Amplifier
MMIC
PRODUCT INFORMATION
Figure 2
Chip Layout and Bond
Pad Locations
Chip Size is 4.67 mm x
2.0 mm x 100 µm. Back
of chip is RF and DC
ground
Dimensions in mm
2.00
1.50
2.44
3.16
4.15 4.57
1.06
0.83
0.60
0.0
0.0
1.23
2.35
3.22
3.84
4.67
0.11
Figure 3
Recommended
Application Schematic
Circuit Diagram
10,000pF
Drain Supply
Vd = +5 V
L
L = Bond Wire Inductance
L
10,000pF
RF IN
L
100pF
L
MMIC Chip
L
100pF
L
Ground
(Back of Chip)
L
100pF
L
L
100pF
L
L
100pF
L
L
100pF
L
RF OUT
L
100pF
L
100pF
L
L
www.raytheon.com/micro
10,000pF
L
L
10,000pF
Gate Supply
Vg
Note: For output power level detection, bias both detector and reference diodes. DC voltage difference between detector and reference can be used
to measure output power after calibration. If output power level detection is not desired, do not make connection to detector bond pad.
Characteristic performance data and specifications are subject to change without notice.
Revised January 15, 2001
Page 3
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
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