RD00HVS1(2006) Ver la hoja de datos (PDF) - Mitsumi
Número de pieza
componentes Descripción
Lista de partido
RD00HVS1 Datasheet PDF : 6 Pages
| |||
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MOS FET
RD00HVS1
RoHS Compliance, Silicon MOSFET Power Transistor 175MHz,0.5W
TEST CIRCUIT(f=175MHz)
Vgg
Vdd
C1
1 8 .0 m m
C2
1 8 .0 m m
1 0 uF ,5 0 V
4mm 2mm
RF-in 180pF
4 .7 kO HM
19.5mm 10.5mm 4.5mm 4mm
L1
10pF
L2
18pF
270OHM
RD00HVS1
L4
5mm
4mm 6.5mm 20.5mm 15mm 4.0mm
L3 250pF RF-out
3pF
18pF
240pF
L1: Enameled wire 4Turns,D:0.43mm,2.46mmO.D
L 2 :L Q G 1 1 A 6 8 N(6 8 nH,m urata)
L3: Enameled wire 9Turns,D:0.43mm,2.46mmO.D
L4: Enameled wire 7Turns,D:0.43mm,2.46mmO.D
C1,C2:1000pF,0.022uF in parallel
Note:Board material-glass epoxi substrate
Micro strip line width=1.0mm/50 OHM,er:4.8,t=0.6mm
TEST CIRCUIT(f=520MHz)
Vgg
Vdd
RF-in
8.5mm
62pF
18pF
C1
W 19mm
4.7kOHM
4mm 7.7mm
3.2mm
RD00HVS1
520MHz
0.6mm 6mm
2.5mm
15pF
6.6nH
24pF
18.1nH
10pF
C2
W 19mm
34.5nH
10.8nH 1.2mm 25.8mm
15mm
RF-out
190pF
5pF
22pF
10pF 3pF
7pF
Note: Board material- Glass epoxy copper-clad laminates FR-4
Micro strip line width=1mm,50 OHM, er:4.8, t=0.6mm
C1,C2:1000pF,0.022uF in parallel
W:Line width=1.0mm
RD00HVS1
MITSUBISHI ELECTRIC
4/6
10 Jan 2006
Share Link: 