P20NF06(2004) Ver la hoja de datos (PDF) - STMicroelectronics

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P20NF06
(Rev.:2004)

N-CHANNEL 60V - 0.06 Ω - 20A TO-220/TO-220FP STripFET™ II POWER MOSFET

STMicroelectronics 

STP20NF06 STF20NF06

Table 4: THERMAL DATA

Rthj-case Thermal Resistance Junction-case

Max

Rthj-amb Thermal Resistance Junction-ambient

Max

Tl

Maximum Lead Temperature For Soldering Purpose

TO-220

TO-220FP

2.5

5.35 °C/W

62.5

°C/W

300

°C

ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)

Table 5: OFF

Symbol

Parameter

V(BR)DSS Drain-source

Breakdown Voltage

Test Conditions

ID = 250 µA, VGS = 0

Min. Typ. Max. Unit

60

V

IDSS

IGSS

Zero Gate Voltage

Drain Current (VGS = 0)

Gate-body Leakage

Current (VDS = 0)

VDS = Max Rating

VDS = Max Rating TC = 125°C

VGS = ± 20V

1

µA

10

µA

±100

nA

Table 6: ON (5)

Symbol

Parameter

VGS(th) Gate Threshold Voltage

RDS(on)

Static Drain-source On

Resistance

Test Conditions

VDS = VGS

ID = 250 µA

VGS = 10 V

ID = 10 A

Min.

2

Typ.

3

0.06

Max.

4

0.07

Unit

V

Ω

Table 7: DYNAMIC

Symbol

Parameter

Test Conditions

Min. Typ. Max. Unit

gfs (5)

Forward Transconductance VDS = 15 V

ID = 8 A

10

S

Ciss

Input Capacitance

VDS = 25V f = 1 MHz VGS = 0

400

pF

Coss

Output Capacitance

100

pF

Crss

Reverse Transfer

40

pF

Capacitance

2/10

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