F20NF06(2004) Ver la hoja de datos (PDF) - STMicroelectronics
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F20NF06
(Rev.:2004)
(Rev.:2004)
STMicroelectronics
F20NF06 Datasheet PDF : 10 Pages
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STP20NF06 STF20NF06
ELECTRICAL CHARACTERISTICS (continued)
Table 8: SWITCHING ON
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
td(on)
Turn-on Delay Time
VDD = 30 V
ID = 10 A
5
ns
tr
Rise Time
RG = 4.7 Ω
VGS = 10 V
15
ns
(Resistive Load, Figure )
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDD= 30 V ID= 20 A VGS= 10 V
14
18
nC
3.0
nC
5.5
nC
Table 9: SWITCHING OFF
Symbol
Parameter
td(off)
tf
Turn-off Delay Time
Fall Time
Test Conditions
Min. Typ. Max. Unit
VDD = 30 V
ID = 10 A
15
ns
RG = 4.7Ω,
VGS = 10 V
5
ns
(Resistive Load, Figure 3)
Table 10: SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
ISD
ISDM (1)
Source-drain Current
Source-drain Current (pulsed)
VSD (2) Forward On Voltage
ISD = 20 A
VGS = 0
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
(1 )Pulse width limited by safe operating area.
(2) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
ISD = 20 A
di/dt = 100A/µs
VDD = 20 V
Tj = 150°C
(see test circuit, Figure 5)
Min.
Typ.
50
80
3.2
Max.
20
80
1.5
Unit
A
A
V
ns
µC
A
Figure 3: Safe Operating Area for TO-220
Figure 4: Safe Operating Area for TO-220FP
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