P20NF06 Ver la hoja de datos (PDF) - STMicroelectronics
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P20NF06 Datasheet PDF : 14 Pages
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Electrical characteristics
2
Electrical characteristics
STP20NF06 - STF20NF06
(TCASE=25°C unless otherwise specified)
Table 3. On/off states
Symbol
Parameter
Drain-source
V(BR)DSS breakdown voltage
IDSS
Zero gate voltage
drain current (VGS = 0)
IGSS
VGS(th)
RDS(on)
Gate-body leakage
current (VDS = 0)
Gate threshold voltage
Static drain-source on
resistance
Test conditions
Min.
ID = 250µA, VGS =0
60
VDS = max ratings
VDS = max ratings,
TC = 125°C
VGS = ± 20V
VDS = VGS, ID = 250µA
2
VGS = 10V, ID = 10A
Typ. Max. Unit
V
1
µA
10
µA
±100 nA
3
4
V
0.06 0.07
Ω
Table 4.
Symbol
Dynamic
Parameter
Test conditions
gfs (1)
Forward
transconductance
VDS = 15V, ID = 8A
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 25V, f = 1MHz,
VGS = 0
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
VDD = 30V, ID = 10A
RG = 4.7Ω VGS = 10V
(see Figure 15)
Qg
Total gate charge
Qgs Gate-source charge
Qgd Gate-drain charge
VDD = 30V, ID = 20A,
VGS = 10V
(see Figure 16)
1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%.
Min. Typ. Max. Unit
10
S
400
pF
100
pF
40
pF
5
ns
15
ns
15
ns
5
ns
14
18
nC
3
nC
5.5
nC
4/14
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