GP1600FSM18 Ver la hoja de datos (PDF) - Dynex Semiconductor
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GP1600FSM18 Datasheet PDF : 9 Pages
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GP1600FSM18
TYPICAL CHARACTERISTICS
3200
2800
Common emitter
Tcase = 25˚C
Vge = 20/15/12V
2400
2000
Vge = 10V
1600
1200
800
400
0
0
1.0 2.0 3.0 4.0 5.0 6.0 7.0
Collector-emitter voltage, Vce - (V)
Fig. 3 Typical output characteristics
3200
2800
Common emitter
Tcase = 125˚C
Vge = 20/15/12V
2400
2000
Vge = 10V
1600
1200
800
400
0
0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0
Collector-emitter voltage, Vce - (V)
Fig. 4 Typical output characteristics
700
Tcase = 125˚C
VGE = ±15V
600 VCE = 900V
Rg = 2.2Ω
500
400
300
200
EOFF
EON
EREC
100
0
0 200 400 600 800 1000 1200 1400 1600
Collector current, IC - (A)
Fig. 5 Typical switching energy vs collector current
1800
Tcase = 125˚C
1600 VGE = ±15V
EON
VCE = 900V
IT = 1600A
1400
1200
1000
800
EOFF
600
400
EREC
200
0
0 1 2 3 4 5 6 7 8 9 10
Fig. 6 Typical switching energy vs gate resistance
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
5/9
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