V10P10HM3 Ver la hoja de datos (PDF) - Vishay Semiconductors

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V10P10HM3

High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier

Vishay Semiconductors 

V10P10

Vishay General Semiconductor

New Product

PACKAGE OUTLINE DIMENSIONS in inches (millimeters)

TO-277A (SMPC)

0.187 (4.75)

0.175 (4.45)

K

0.016 (0.40)

0.006 (0.15)

0.262 (6.65)

0.250 (6.35)

0.242 (6.15)

0.238 (6.05)

2

1

0.171 (4.35)

0.167 (4.25)

0.146 (3.70)

0.134 (3.40)

0.087 (2.20)

0.075 (1.90)

0.047 (1.20)

0.039 (1.00)

Mounting Pad Layout

0.189 (4.80)

MIN.

0.189 (4.80)

0.173 (4.40)

0.155 (3.94)

NOM.

0.049 (1.24)

0.037 (0.94)

0.084 (2.13) NOM.

0.053 (1.35)

0.041 (1.05)

0.030 (0.75) NOM.

0.268

(6.80)

Conform to JEDEC TO-277A

0.041

(1.04)

0.186 (4.72)

MIN.

0.050 (1.27)

MIN.

0.055 (1.40)

MIN.

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For technical questions within your region, please contact one of the following: Document Number: 89006

DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

Revision: 25-May-11

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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