IKW75N60T Ver la hoja de datos (PDF) - Infineon Technologies

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IKW75N60T

Low Loss DuoPack : IGBT in TRENCHSTOP™ and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode

Infineon Technologies 

IKW75N60T

TRENCHSTOP™ Series

q

15V

120V

10V

480V

5V

0V0nC 100nC 200nC 300nC 400nC

QGE, GATE CHARGE

Figure 17. Typical gate charge

(IC=75 A)

C iss

1nF

100pF

C oss

C rss

0V

10V

20V

VCE, COLLECTOR-EMITTER VOLTAGE

Figure 18. Typical capacitance as a function

of collector-emitter voltage

(VGE=0V, f = 1 MHz)

1000

750

500

250

0

12 13 14 15 16 17 18 19 20

VGE, GATE-EMITTER VOLTAGE

Figure 19. Typical short circuit collector

current as a function of gate-

emitter voltage

(VCE  400V, Tj  150C)

12µs

10µs

8µs

6µs

4µs

2µs

0µs

10V

11V

12V

13V

14V

VGE, GATE- EMITTER VOLTAGE

Figure 20. Short circuit withstand time as a

function of gate-emitter voltage

(VCE=400V, start at TJ=25°C,

TJmax<150°C)

IFAG IPC TD VLS

8

Rev. 2.8 2013-12-05

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