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P9NC60

N-CHANNEL 600V - 0.6Ω - 9A - TO-220/TO-220FP PowerMeshII MOSFET

STMicroelectronics 

STP9NC60

STP9NC60FP

N-CHANNEL 600V - 0.6Ω - 9A - TO-220/TO-220FP

PowerMesh™II MOSFET

TYPE

VDSS

RDS(on)

ID

STP9NC60

STP9NC60FP

600 V

600 V

< 0.75 Ω 9.0 A

< 0.75 Ω 9.0 A (*)

s TYPICAL RDS(on) = 0.6 Ω

s EXTREMELY HIGH dv/dt CAPABILITY

s 100% AVALANCHE TESTED

s NEW HIGH VOLTAGE BENCHMARK

s GATE CHARGE MINIMIZED

DESCRIPTION

The PowerMESH™II is the evolution of the first

generation of MESH OVERLAY™. The layout re-

finements introduced greatly improve the Ron*area

figure of merit while keeping the device at the lead-

ing edge for what concerns swithing speed, gate

charge and ruggedness.

APPLICATIONS

s HIGH CURRENT, HIGH SPEED SWITCHING

s SWITH MODE POWER SUPPLIES (SMPS)

s DC-AC CONVERTERS FOR WELDING

EQUIPMENT AND UNINTERRUPTIBLE

POWER SUPPLIES AND MOTOR DRIVER

3

2

1

TO-220

3

2

1

TO-220FP

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

VDS

VDGR

VGS

Drain-source Voltage (VGS = 0)

Drain-gate Voltage (RGS = 20 kΩ)

Gate- source Voltage

ID

Drain Current (continuos) at TC = 25°C

ID

Drain Current (continuos) at TC = 100°C

IDM (1)

PTOT

Drain Current (pulsed)

Total Dissipation at TC = 25°C

Derating Factor

dv/dt

Peak Diode Recovery voltage slope

VISO

Tstg

Tj

Insulation Withstand Voltage (DC)

Storage Temperature

Max. Operating Junction Temperature

(•)Pulse width limited by safe operating area

.

February 2002

Value

STP9NC60 STP9NC60FP

600

600

±30

9

9 (*)

5.7

5.7 (*)

36

36 (*)

125

40

1.0

0.32

3.5

-

2500

Unit

V

V

V

A

A

A

W

W/°C

V/ns

V

– 55 to 150

°C

(1)ISD ≤9A, di/dt ≤100A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX

(*) Limited only by Maximum Temperature Allowed

1/9

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