ISL9R18120P2 Ver la hoja de datos (PDF) - Fairchild Semiconductor
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ISL9R18120P2 Datasheet PDF : 6 Pages
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Package Marking and Ordering Information
Device Marking
R18120G2
R18120P2
R18120S3
Device
ISL9R18120G2
ISL9R18120P2
ISL9R18120S3S
Package
TO-247
TO-220AC
TO-263AB
Tape Width
N/A
N/A
24mm
Quantity
30
50
800
Electrical Characteristics TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off State Characteristics
IR
Instantaneous Reverse Current
VR = 1200V
TC = 25°C
TC = 125°C
-
- 100 µA
-
- 1.0 mA
On State Characteristics
VF Instantaneous Forward Voltage
IF = 18A
TC = 25°C
TC = 125°C
- 2.7 3.3 V
- 2.5 3.1 V
Dynamic Characteristics
CJ Junction Capacitance
VR = 10V, IF = 0A
-
69
-
pF
Switching Characteristics
trr
Reverse Recovery Time
trr
IRM(REC)
QRR
trr
S
IRM(REC)
QRR
trr
S
IRM(REC)
QRR
dIM/dt
Reverse Recovery Time
Maximum Reverse Recovery Current
Reverse Recovered Charge
Reverse Recovery Time
Softness Factor (tb/ta)
Maximum Reverse Recovery Current
Reverse Recovered Charge
Reverse Recovery Time
Softness Factor (tb/ta)
Maximum Reverse Recovery Current
Reverse Recovered Charge
Maximum di/dt during tb
IF = 1A, dIF/dt = 100A/µs, VR = 30V
-
IF = 18A, dIF/dt = 100A/µs, VR = 30V -
IF = 18A,
-
dIF/dt = 200A/µs,
-
VR = 780V, TC = 25°C
-
IF = 18A,
-
dIF/dt = 200A/µs,
-
VR = 780V,
-
TC = 125°C
-
IF = 18A,
-
dIF/dt = 1000A/µs,
-
VR = 780V,
-
TC = 125°C
-
-
38 45 ns
60 70 ns
300 -
ns
6.5 -
A
950
-
nC
400 -
ns
7.0 -
-
8.0 -
A
2.0
-
µC
235 -
ns
5.2 -
-
22
-
A
2.1
-
µC
370 - A/µs
Thermal Characteristics
RθJC
RθJA
RθJA
Thermal Resistance Junction to Case TO-247, TO-220, TO-263
Thermal Resistance Junction to Ambient TO-247
Thermal Resistance Junction to Ambient TO-220, TO-263
-
- 1.0 °C/W
-
-
30 °C/W
-
-
62 °C/W
©2004 Fairchild Semiconductor Corporation
ISL9R18120G2 / ISL9R18120P2 / ISL9R18120S3S Rev. B
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