IRF640 Ver la hoja de datos (PDF) - Fairchild Semiconductor
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IRF640 Datasheet PDF : 7 Pages
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IRF640, RF1S640, RF1S640SM
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
IRF640, RF1S640, RF1S640SM
UNITS
Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS
200
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
200
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
18
TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
11
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
72
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
±20
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
125
Dissipation Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1.0
V
V
A
A
A
V
W
W/oC
Single Pulse Avalanche Energy Rating (Note 4). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS
580
mJ
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
-55 to 150
oC
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
300
Package Body for 10s, See TB334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg
260
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25oC to 125oC.
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
Drain to Source Breakdown Voltage
BVDSS ID = 250µA, VGS = 0V, (Figure 10)
200
Gate Threshold Voltage
VGS(TH) VGS = VDS, ID = 250µA
2
Zero Gate Voltage Drain Current
IDSS
VDS = Rated BVDSS, VGS = 0V
-
VDS = 0.8 x Rated BVDSS, VGS = 0V, TJ = 125oC
-
On-State Drain Current (Note 1)
ID(ON) VDS > ID(ON) x rDS(ON)MAX, VGS = 10V (Figure 7) 18
Gate to Source Leakage Current
IGSS VGS = ±20V
-
Drain to Source On Resistance (Note 1) rDS(ON) ID = 10A, VGS = 10V (Figures 8, 9)
-
Forward Transconductance (Note 1)
gfs
VDS ≥ 10V, ID = 11A (Figure 12)
6.7
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
td(ON) VDD = 100V, ID ≈ 18A, RGS = 9.1Ω, RL = 5.4Ω,
-
tr
MOSFET Switching Times are Essentially
Independent of Operating Temperature
-
td(OFF)
-
Fall Time
tf
-
Total Gate Charge
(Gate to Source + Gate to Drain)
Gate to Source Charge
Gate to Drain “Miller” Charge
Qg(TOT) VGS = 10V, ID ≈ 18A, VDS = 0.8 x Rated BVDSS
-
(Figure 14) Gate Charge is Essentially Independent
Qgs
Qgd
of Operating Temperature
IG(REF) = 1.5mA
-
-
Input Capacitance
CISS VDS = 25V, VGS = 0V, f = 1MHz (Figure 11)
-
Output Capacitance
COSS
-
Reverse Transfer Capacitance
CRSS
-
Internal Drain Inductance
Internal Source Inductance
LD
Measured From the
Modified MOSFET
-
Contact Screw on Tab to Symbol Showing the
Center of Die
Internal Devices
Measured From the Drain Inductances
-
Lead, 6mm (0.25in) From
D
Package to Center of Die
LD
LS
Measured From the
-
Source Lead, 6mm
G
(0.25in) from Header to
LS
Source Bonding Pad
S
Thermal Resistance Junction to Case
RθJC
-
Thermal Resistance Junction to
Ambient
RθJA Free Air Operation, IRF640
-
RθJA RF1S640SM Mounted on FR-4 Board with Minimum -
Mounting Pad
TYP
-
-
-
-
-
-
0.14
10
13
50
46
35
43
8
22
1275
400
100
3.5
4.5
7.5
-
-
-
MAX
-
4
25
250
-
±100
0.18
-
21
77
68
54
64
-
-
-
-
-
-
-
-
1
62
62
UNITS
V
V
µA
µA
A
nA
Ω
S
ns
ns
ns
ns
nC
nC
nC
pF
pF
pF
nH
nH
nH
oC/W
oC/W
oC/W
©2001 Fairchild Semiconductor Corporation
IRF640, RF1S640, RF1S640SM Rev. B
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