A1290 Ver la hoja de datos (PDF) - SavantIC Semiconductor

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A1290

Silicon PNP Power Transistors

SavantIC Semiconductor  

SavantIC Semiconductor

Silicon PNP Power Transistors

Product Specification

2SA1290

CHARACTERISTICS

Tj=25 unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-emitter breakdown voltage IC=-1mA ,RBE=;

V(BR)CBO Collector-base breakdown voltage

IC=-1mA ,IE=0

V(BR)EBO Emitter-base breakdown voltage

IE=-1mA ,IC=0

VCEsat Collector-emitter saturation voltage IC=-3.5A; IB=-0.175A

ICBO

Collector cut-off current

VCB=-40V; IE=0

IEBO

Emitter cut-off current

VEB=-4V; IC=0

hFE

DC current gain

IC=-1A ; VCE=-2V

fT

Transition frequency

IC=-1A ; VCE=-5V

Switching times

ton

Turn-on time

tstg

Storage time

tf

Fall time

VCC=-20V; IC=-3A

IB1=-IB2=-0.15A;RL=6.67B

MIN TYP. MAX UNIT

-60

V

-80

V

-7

V

-0.4

V

-100 µA

-100 µA

70

280

100

MHz

0.1

µs

0.5

µs

0.1

µs

hFE Classifications

Q

R

S

70-140 100-200 140-280

2

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