20N60(2014) Ver la hoja de datos (PDF) - Fairchild Semiconductor
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20N60 Datasheet PDF : 10 Pages
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Package Marking and Ordering Information
Part Number
FCP20N60
FCPF20N60
Top Mark
FCP20N60
FCPF20N60
Package
TO-220
TO-220F
Packing Method
Tube
Tube
Reel Size
N/A
N/A
Tape Width
N/A
N/A
Electrical Characteristics TC = 25oC unless otherwise noted.
Symbol
Parameter
Test Conditions
Off Characteristics
BVDSS
ΔBVDSS
/ ΔTJ
BVDS
IDSS
IGSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Drain-Source Avalanche Breakdown
Voltage
Zero Gate Voltage Drain Current
Gate to Body Leakage Current
ID = 250 μA, VGS = 0 V, TJ = 25oC
ID = 250 μA, VGS = 0 V, TJ = 150oC
ID = 250 μA, Referenced to 25oC
VGS = 0 V, ID = 20 A
VDS = 600 V, VGS = 0 V
VDS = 480 V, TC = 125oC
VGS = ±30 V, VDS = 0 V
On Characteristics
VGS(th)
RDS(on)
gFS
Gate Threshold Voltage
Static Drain to Source On Resistance
Forward Transconductance
VGS = VDS, ID = 250 μA
VGS = 10 V, ID = 10 A
VDS = 40 V, ID = 10 A
Dynamic Characteristics
Ciss
Coss
Crss
Coss
Coss(eff.)
Qg
Qgs
Qgd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Effective Output Capacitance
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
VDS = 25 V, VGS = 0 V,
f = 1 MHz
VDS = 480 V, VGS = 0 V, f = 1 MHz
VDS = 0 V to 400 V, VGS = 0 V
VDS = 480 V, ID = 20 A,
VGS = 10 V
(Note 4)
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
VDD = 300 V, ID = 20 A,
VGS = 10 V, RG = 25 Ω
(Note 4)
Drain-Source Diode Characteristics
IS
Maximum Continuous Drain to Source Diode Forward Current
ISM
Maximum Pulsed Drain to Source Diode Forward Current
VSD
Drain to Source Diode Forward Voltage
VGS = 0 V, ISD = 20 A
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0 V, ISD = 20 A,
dIF/dt = 100 A/μs
Notes:
1: Repetitive rating: pulse-width limited by maximum junction temperature.
2: IAS = 10 A, VDD = 50 V, RG = 25 Ω, starting TJ = 25°C.
3: ISD ≤ 20 A, di/dt ≤ 200 A/μs, VDD ≤ BVDSS, starting TJ = 25°C.
4: Essentially independent of operating temperature typical characteristics.
Min.
600
-
-
-
-
-
-
3.0
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
650
0.6
700
-
-
-
-
0.15
17
2370
1280
95
65
165
75
13.5
36
62
140
230
65
-
-
-
530
10.5
Quantity
50 units
50 units
Max. Unit
-
V
-
V
-
V/oC
-
V
1
10
μA
±100 nA
5.0
V
0.19
Ω
-
S
3080 pF
1665 pF
-
pF
85
pF
-
pF
98
nC
18
nC
-
nC
135
ns
290
ns
470
ns
140
ns
20
A
60
A
1.4
V
-
ns
-
μC
©2008 Fairchild Semiconductor Corporation
2
FCP20N60 / FCPF20N60 Rev. C0
www.fairchildsemi.com
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