IKP40N65F5(2012) Ver la hoja de datos (PDF) - Infineon Technologies

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IKP40N65F5
(Rev.:2012)

650V DuoPack IGBT and Diode High speed switching series fifth generation

Infineon Technologies 

IKW40N65F5,IKP40N65F5

Highspeedswitchingseriesfifthgeneration

Maximumratings

Parameter

Collector-emitter voltage

DCcollectorcurrent,limitedbyTvjmax

TC=25°C

TC=100°C

Pulsedcollectorcurrent,tplimitedbyTvjmax

TurnoffsafeoperatingareaVCE≤650V,Tvj≤175°C

Diodeforwardcurrent,limitedbyTvjmax

TC=25°C

TC=100°C

Diodepulsedcurrent,tplimitedbyTvjmax

Gate-emitter voltage

TransientGate-emittervoltage(tp≤10µs,D<0.010)

PowerdissipationTC=25°C

PowerdissipationTC=100°C

Operating junction temperature

Storage temperature

Soldering temperature,

wave soldering 1.6 mm (0.063 in.) from case for 10s

Mounting torque, M3 screw

Maximum of mounting processes: 3

Symbol

VCE

Value

650

IC

ICpuls

-

74.0

46.0

120.0

120.0

IF

IFpuls

VGE

Ptot

Tvj

Tstg

36.0

21.0

120.0

±20

±30

255.0

120.0

-40...+175

-55...+150

PG-TO247-pinGCE

260

PG-TO220-3

260

M

0.6

Unit

V

A

A

A

A

A

V

W

°C

°C

°C

Nm

ThermalResistance

Parameter

Characteristic

IGBT thermal resistance,

junction - case

Diode thermal resistance,

junction - case

Thermal resistance

junction - ambient

Symbol Conditions

Rth(j-c)

Rth(j-c)

Rth(j-a)

PG-TO247-pinGCE

PG-TO220-3

Max.Value

Unit

0.60

K/W

1.80

K/W

40

62

K/W

4

Rev.1.1,2012-11-09

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