K1517 Ver la hoja de datos (PDF) - Hitachi -> Renesas Electronics

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K1517

Silicon N-Channel MOS FET

Hitachi -> Renesas Electronics 

Electrical Characteristics (Ta = 25°C)

Item

Symbol Min

Drain to source

2SK1517 V(BR)DSS 450

breakdown voltage 2SK1518

500

Gate to source breakdown

voltage

V(BR)GSS

±30

Gate to source leak current IGSS

—

Zero gate voltage 2SK1517 IDSS

—

drain current

2SK1518

Gate to source cutoff voltage VGS(off) 2.0

Static Drain to source 2SK1517 RDS(on) —

on state resistance 2SK1518

—

Forward transfer admittance |yfs|

10

Input capacitance

Ciss —

Output capacitance

Coss —

Reverse transfer capacitance Crss —

Turn-on delay time

td(on)

—

Rise time

tr

—

Turn-off delay time

td(off)

—

Fall time

tf

—

Body to drain diode forward VDF

—

voltage

Body to drain diode reverse trr

—

recovery time

Note 1. Pulse test

Typ Max

—

—

—

—

—

±10

—

250

—

3.0

0.20 0.25

0.22 0.27

16

—

3050 —

940 —

140 —

35

—

130 —

240 —

105 —

1.0 —

120 —

Unit

V

V

µA

µA

V

Ω

S

pF

pF

pF

ns

ns

ns

ns

V

ns

2SK1517, 2SK1518

Test conditions

ID = 10 mA, VGS = 0

IG = ±100 µA, VDS = 0

VGS = ±25 V, VDS = 0

VDS = 360 V, VGS = 0

VDS = 400 V, VGS = 0

ID = 1 mA, VDS = 10 V

ID = 10 A, VGS = 10 V *1

ID = 10 A, VDS = 10 V *1

VDS = 10 V, VGS = 0,

f = 1 MHz

ID = 10 A, VGS = 10 V,

RL = 3 Ω

IF = 20 A, VGS = 0

IF = 20 A, VGS = 0,

diF/dt = 100 A/µs

3

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