IKW25N120T2(2008) Ver la hoja de datos (PDF) - Infineon Technologies
Número de pieza
componentes Descripción
Lista de partido
IKW25N120T2
(Rev.:2008)
(Rev.:2008)
Infineon Technologies
IKW25N120T2 Datasheet PDF : 15 Pages
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IKW25N120T2
TrenchStop® 2nd generation Series
VCE
600V
400V
45A
45A
IC
30A
30A
600V
400V
200V
15A
IC
0V
0A
0us
0.4us
0.8us
1.2us
t, TIME
Figure 21. Typical turn on behavior
(VGE=0/15V, RG=16.4Ω, Tj = 175°C,
Dynamic test circuit in Figure E)
15A
200V
VCE
0A
0V
0us
0.4us
0.8us
1.2us
t, TIME
Figure 22. Typical turn off behavior
(VGE=15/0V, RG=16.4Ω, Tj = 175°C,
Dynamic test circuit in Figure E)
D=0.5
10-1K/W 0.2
0.1
0.05
10-2K/W
R,(K/W)
0.083
0.02
0.01
0.116
0.213
0.014
single pulse
R1
τ, (s)
2.77*10-4
3.21*10-3
1.73*10-2
2.77*10-1
R2
C1=τ1/R1 C2=τ2/R2
10-3K/W
10µs 100µs 1ms 10ms 100ms
tP, PULSE WIDTH
Figure 23. IGBT transient thermal resistance
(D = tp / T)
D=0.5
0.2
10-1K/W 0.1
0.05
10-2K/W
R,(K/W)
0.198
0.301
0.287
0.019
τ, (s)
3.31*10-4
3.33*10-3
1.68*10-2
2.49*10-1
0.02 R1
R2
0.01
single pulseC 1 = τ1/ R 1 C 2 = τ2/ R 2
10µs 100µs 1ms 10ms 100ms
tP, PULSE WIDTH
Figure 24. Diode transient thermal
impedance as a function of pulse
width
(D=tP/T)
Power Semiconductors
10
Rev. 2.1 Sep 08
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