2SC3150 Ver la hoja de datos (PDF) - SavantIC Semiconductor

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2SC3150

Silicon NPN Power Transistors

SavantIC Semiconductor  

SavantIC Semiconductor

Silicon NPN Power Transistors

Product Specification

2SC3150

CHARACTERISTICS

Tj=25 unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-emitter breakdown voltage IC=5mA ; RBE=;

V(BR)CBO Collector-base breakdown voltage

IC=1mA ; IE=0

V(BR)EBO Base-emitter breakdown voltage

IE=1mA ; IC=0

VCEsat Collector-emitter saturation voltage IC=1.5A; IB=0.3A

VBEsat

ICBO

IEBO

hFE-1

hFE-2

Base-emitter saturation voltage

Collector cut-off current

Emitter cut-off current

DC current gain

DC current gain

IC=1.5A; IB=0.3A

VCB=800V ;IE=0

VEB=5V; IC=0

IC=0.2A ; VCE=5V

IC=1A ; VCE=5V

fT

Transition frequency

IC=0.2A ; VCE=10V

COB

Output capacitance

f=10MHz ; VCB=10V

Switching times

ton

Turn-on time

tstg

Storage time

tf

Fall time

VCC=400V; IC=2A

IB1=0.4A;IB2=-0.8A;

RL=200D

hFE-1 classifications

K

L

M

10-20

15-30

20-40

MIN TYP. MAX UNIT

800

V

900

V

7

V

2.0

V

1.5

V

10

µA

10

µA

10

40

8

15

MHz

60

pF

1.0

µs

3.0

µs

0.7

µs

2

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