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RF3826PCBA-410

30MHz TO 2500MHz, 9W GaN WIDEBAND POWER AMPLIFIER

RF Micro Devices 

RF3826

Absolute Maximum Ratings

Parameter

Drain Voltage (VD)

Gate Voltage (VG)

Gate Current (IG)

Operational Voltage

RF- Input Power

Ruggedness (VSWR)

Storage Temperature Range

Operating Temperature Range (TC)

Operating Junction Temperature (TJ)

Human Body Model

Rating

150

-8 to +2

5

32

34

12:1

-55 to +125

-40 to +85

250

Class 1B

Unit

V

V

mA

V

dBm

°C

°C

°C

Caution! ESD sensitive device.

Exceeding any one or a combination of the Absolute Maximum Rating conditions may

cause permanent damage to the device. Extended application of Absolute Maximum

Rating conditions to the device may reduce device reliability. Specified typical perfor-

mance or functional operation of the device under Absolute Maximum Rating condi-

tions is not implied.

The information in this publication is believed to be accurate and reliable. However, no

responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any

infringement of patents, or other rights of third parties, resulting from its use. No

license is granted by implication or otherwise under any patent or patent rights of

RFMD. RFMD reserves the right to change component circuitry, recommended appli-

cation circuitry and specifications at any time without prior notice.

RFMD Green: RoHS compliant per EU Directive 2011/65/EU, halogen free

per IEC 61249-2-21, < 1000ppm each of antimony trioxide in polymeric

materials and red phosphorus as a flame retardant, and <2% antimony in

solder.

MTTF (TJ < 200°C, 95% Confidence Limits)*

1.8E+07

Hours

MTTF (TJ < 250°C, 95% Confidence Limits)*

1.1E+05

Thermal Resistance, RTH (junction to case)

9.8

°C/W

measured at TC = 85°C, DC bias only

* MTTF - median time to failure as determined by the process technology wear-out failure mode. Refer to product qualification report for

FIT(random) failure rate.

Operation of this device beyond any one of these limits may cause permanent damage. For reliable continuous operation, the device voltage

and current must not exceed the maximum operating values specified in the table on page two.

Bias Conditions should also satisfy the following expression: PDISS < (TJ - TC)/RTH J - C and TC = TCASE

Parameter

Recommended Operating

Conditions

Drain Voltage (VDSQ)

Gate Voltage (VGSQ)

Drain Bias Current

RF Input Power (PIN)

Input Source VSWR

RF Performance

Characteristics

Frequency Range

Linear Gain

Power Gain

Gain Flatness

Gain Variation with Temperature

Input Return Loss (S11)

Output Power (P3dB)

Power Added Efficiency (PAE)

Specification

Min.

Typ.

Max.

28

32

-5

-3

-2.5

55

32

10:1

30

2500

12

9

1

-0.02

-10

-8

39.5

45

50

Unit

Condition

V

V

mA

dBm

MHz

dB

dB

dB

dB/ °C

dB

dBm

%

%

Small signal 3dB bandwidth

POUT = 30dBm

P3DB

POUT = 30dBm, 30MHz to 2500MHz

30MHz to 2500MHz

30MHz to 2500MHz

200MHz to 1800MHz

2 of 14

7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical

support, contact RFMD at (+1) 336-678-5570 or customerservice@rfmd.com.

DS130405

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