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30F121

Insulated Gate Bipolar Transistor

Toshiba 

Part Number : 30F121, GT30F121

Function : 300V IGBT, Plasma Display Panel Applications

Manufacturers : Toshiba

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Features of the Toshiba Discrete IGBTs

IGBT: Insulated Gate Bipolar Transistor

● IGBTs combine the MOSFET advantage of high input impedance with the bipolar transistor

advantage of high-voltage drive.

● The conductivity modulation characteristics of a bipolar transistor make it ideal for load control

applications that require high breakdown voltage and high current.

● Toshiba offers a family of fast switching IGBTs, which are low injection and recombination in the

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