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IRGP6630D-EPBF

Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode

International Rectifier 

IRGP6630DPbF/IRGP6630D-EPbF

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter

Min. Typ.

V(BR)CES

Collector-to-Emitter Breakdown Voltage

600

V(BR)CES/TJ Temperature Coeff. of Breakdown Voltage —

—

VCE(on)

Collector-to-Emitter Saturation Voltage

—

—

VGE(th)

Gate Threshold Voltage

4.0

VGE(th)/TJ Threshold Voltage Temperature Coeff.

—

gfe

Forward Transconductance

—

ICES

Collector-to-Emitter Leakage Current

—

—

IGES

Gate-to-Emitter Leakage Current

—

VF

Diode Forward Voltage Drop

—

—

—

0.94

1.65

2.05

2.10

—

-20

12

1.0

410

—

1.6

1.3

Switching Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter

Min. Typ.

Qg

Total Gate Charge (turn-on)

Qge

Gate-to-Emitter Charge (turn-on)

Qgc

Gate-to-Collector Charge (turn-on)

Eon

Turn-On Switching Loss

Eoff

Turn-Off Switching Loss

Etotal

Total Switching Loss

td(on)

Turn-On delay time

tr

Rise time

td(off)

Turn-Off delay time

tf

Fall time

Eon

Turn-On Switching Loss

Eoff

Turn-Off Switching Loss

Etotal

Total Switching Loss

td(on)

Turn-On delay time

tr

Rise time

td(off)

Turn-Off delay time

tf

Fall time

Cies

Input Capacitance

Coes

Output Capacitance

Cres

Reverse Transfer Capacitance

—

30

—

10

—

15

—

75

—

350

—

425

—

40

—

25

—

95

—

20

—

230

—

570

—

800

—

30

—

25

—

100

—

80

— 1080

—

70

—

30

Max.

—

—

1.95

—

—

6.5

—

—

25

—

±100

2.3

—

Max

—

—

—

—

—

—

—

—

—

—

—

—

—

—

—

—

—

—

—

—

RBSOA

Reverse Bias Safe Operating Area

FULL SQUARE

SCSOA

Erec

trr

Irr

Short Circuit Safe Operating Area

Reverse Recovery Energy of the Diode

Diode Reverse Recovery Time

Peak Reverse Recovery Current

5

—

—

—

180 —

—

70

—

—

15

—

Units

Conditions

V VGE = 0V, IC = 100µA 

V/°C VGE = 0V, IC = 1.2mA (25°C-175°C)

IC = 18A, VGE = 15V, TJ = 25°C

V IC = 18A, VGE = 15V, TJ = 150°C

IC = 18A, VGE = 15V, TJ = 175°C

V VCE = VGE, IC = 500µA

mV/°C VCE = VGE, IC = 500µA (25°C-175°C)

S VCE = 50V, IC = 18A, PW = 20µs

µA

VGE = 0V, VCE = 600V

VGE = 0V, VCE = 600V, TJ = 175°C

nA VGE = ±20V

V

IF = 6A

IF = 6A, TJ = 175°C

Units

Conditions

IC = 18A

nC VGE = 15V

VCC = 400V

µJ IC = 18A, VCC = 400V, VGE=15V

RG = 22, TJ = 25°C

Energy losses include tail & diode

ns reverse recovery 

µJ IC = 18A, VCC = 400V, VGE=15V

RG = 22, TJ = 175°C

Energy losses include tail & diode

ns reverse recovery 

VGE = 0V

pF VCC = 30V

f = 1.0MHz

TJ = 175°C, IC = 72A

VCC = 480V, Vp ≤ 600V

VGE = +20V to 0V

µs

TJ = 150°C,VCC = 400V, Vp ≤ 600V

VGE = +15V to 0V

µJ TJ = 175°C

ns VCC = 400V, IF = 6A, VGE = 15V

A Rg = 22L = 0.68mH, L=150nH

Notes:

 VCC = 80% (VCES), VGE = 20V, Rg = 22L=620µH.

 R is measured at TJ of approximately 90°C.

 Refer to AN-1086 for guidelines for measuring V(BR)CES safely.

 Pulse width limited by max. junction temperature.

 Values influenced by parasitic L and C in measurement.

 fsw =40KHz, refer to figure 26.

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November 14, 2014

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