IRGP6630DPBF Ver la hoja de datos (PDF) - International Rectifier

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IRGP6630DPBF

Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode

International Rectifier 

72

VGE = 18V

60

VGE = 15V

VGE = 12V

VGE = 10V

48

VGE = 8.0V

36

24

12

0

0

2

4

6

8

10

VCE (V)

Fig. 6 - Typ. IGBT Output Characteristics

TJ = -40°C; tp = 20µs

72

VGE = 18V

60 VGE = 15V

VGE = 12V

VGE = 10V

48 VGE = 8.0V

36

24

12

0

0

2

4

6

8

10

VCE (V)

Fig. 8 - Typ. IGBT Output Characteristics

TJ = 175°C; tp = 20µs

8

6

ICE = 9.0A

ICE = 18A

ICE = 36A

4

IRGP6630DPbF/IRGP6630D-EPbF

72

VGE = 18V

60

VGE = 15V

VGE = 12V

VGE = 10V

48

VGE = 8.0V

36

24

12

0

0

2

4

6

8

10

VCE (V)

Fig. 7 - Typ. IGBT Output Characteristics

TJ = 25°C; tp = 20µs

72

-40°C

60

25°C

175°C

48

36

24

12

0

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0

VF (V)

Fig. 9 - Typ. Diode Forward Voltage Drop

Characteristics

8

6

ICE = 9.0A

ICE = 18A

4

ICE = 36A

2

2

0

5

10

15

20

VGE (V)

0

5

10

15

20

VGE (V)

Fig. 10 - Typical VCE vs. VGE

TJ = -40°C

Fig. 11 - Typical VCE vs. VGE

TJ = 25°C

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November 14, 2014

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