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IRGP6630

Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode

International Rectifier 

IRGP6630DPbF/IRGP6630D-EPbF

10

D = 0.50

1

0.1

0.01

0.001

1E-006

0.20

0.10

0.05

0.02

0.01

SINGLE PULSE

( THERMAL RESPONSE )

Ri (°C/W)

i (sec)

R 1R 1

R2R2

R 3R 3

R4R4

0.40747

J J

1 1

CC

1.84187

2 2

3 3

4 4

2.51697

Ci= iRi

Ci= iRi

1.13369

0.000104

0.000268

0.002634

0.026058

Notes:

1. Duty Factor D = t1/t2

2. Peak Tj = P dm x Zthjc + Tc

1E-005

0.0001

0.001

0.01

0.1

1

t1 , Rectangular Pulse Duration (sec)

Fig. 28 - Maximum Transient Thermal Impedance, Junction-to-Case (DIODE)

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November 14, 2014

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