RFL1P10 Ver la hoja de datos (PDF) - Intersil

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Lista de partido

RFL1P10

1A, -80V and -100V, 3.65 Ohm, P-Channel Power MOSFETs

Intersil 

Semiconductor

July 1998

Features

• 1A, -80V and -100V

• rDS(ON) = 3.65Ω

• SOA is Power Dissipation Limited

• Nanosecond Switching Speeds

• Linear Transfer Characteristics

• High Input Impedance

• Majority Carrier Device

Ordering Information

PART NUMBER

PACKAGE

BRAND

RFL1P08

TO-205AF

RFL1P08

RFL1P10

TO-205AF

RFL1P10

NOTE: When ordering, include the entire part number.

RFL1P08,

RFL1P10

1A, -80V and -100V, 3.65 Ohm,

P-Channel Power MOSFETs

Description

These are P-Channel enhancement mode silicon gate

power field effect transistors designed for applications such

as switching regulators, switching converters, motor drivers,

relay drivers, and drivers for high power bipolar switching

transistors requiring high speed and low gate drive power.

These types can be operated directly from integrated cir-

cuits.

Formerly developmental type TA9400.

Symbol

D

G

S

Packaging

JEDEC TO-205AF

DRAIN

(CASE)

GATE

SOURCE

CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.

Copyright © Harris Corporation 1998

6-1

File Number 1535.2

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