PDM4M4120S20AM Ver la hoja de datos (PDF) - Paradigm Technology
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PDM4M4120S20AM Datasheet PDF : 10 Pages
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PRELIMINARY
PDM4M4120
AC Electrical Characteristics (Vcc = 5V ± 5%, TA = 0°C to +70°C)
PDM4M4120SXXZ, PDM4M4120SXXM,
PDM4M4120SXXAM
Symbol Parameter
-15 ns
-20 ns
-25 ns
Min. Max. Min. Max. Min. Max. Unit
Read Cycle
tRC
Read Cycle Time
tAA
Address Access Time
tACS
tCLZ(1)
Chip Select Access Time
Chip Select to Output inLow-Z
tOE
tOLZ(1)
tCHZ(1)
tOHZ(1)
Output Enable to Output Valid
Output Enable to Output in Low-Z
Chip Deselect to Output in High-Z
Output Disable to Output in High-Z
tOH
tPU(1)
tPD(1)
Output Hold from Address Change
Chip Select to Power-Up Time
Chip Deselect to Power-Down Time
Write Cycle
tWC
tCW
tAW
tAS
tWP
tWR
tWHZ(1)
tDW
tDH
tOW(1)
Write Cycle Time
Chip Select to End of Write
Address Valid to End of Write
Address Setup Time
Write Pulse Width
Write Recovery Time
Write Enable to Output in High-Z
Data to Write Time Overlap
Data Hold from Write Time
Output Active from End of Write
15 — 20 — 25 —
ns
— 15 — 20 — 25
ns
— 15 — 20 — 25
ns
3—3—3—
ns
— 8 — 10 — 15
ns
0—0—0—
ns
— 9 — 10 — 12
ns
— 9 — 10 — 12
ns
3—3—3—
ns
0—0—0—
ns
— 15 — 20 — 25
ns
15 — 20 — 25 —
ns
12 — 17 — 20 —
ns
12 — 17 — 20 —
ns
0
–
0—0—
ns
12 — 15 — 20 —
ns
3—3—3—
ns
— 12 — 10 — 15
ns
12 — 12 — 15 —
ns
0—0—0—
ns
0—0—0—
ns
NOTE 1. This parameter is determined by device characteristics but is not production tested.
8-56
Rev 2.3
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