12N65 Ver la hoja de datos (PDF) - Unisonic Technologies
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12N65 Datasheet PDF : 7 Pages
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12N65
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
650
V
Gate-Source Voltage
VGSS
±30
V
Avalanche Current (Note 2)
IAR
12
A
Drain Current
Continuous
ID
Pulsed (Note 2)
IDM
12
A
48
A
Avalanche Energy
Single Pulsed (Note 3)
EAS
Repetitive (Note 2)
EAR
790
mJ
24
mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4.5
V/ns
TO-220 / TO-262
Power Dissipation
TO-220F / TO-220F1
PD
225
W
51
W
Junction Temperature
TJ
+150
°C
Operating Temperature
TOPR
-55 ~ +150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by maximum junction temperature
3. L = 10mH, IAS = 12A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C
4. ISD ≤ 12A, di/dt ≤200A/s, VDD ≤BVDSS Starting TJ = 25°C
THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
TO-220 / TO-262
TO-220F/TO-220F1
SYMBOL
θJA
θJC
RATING
62.5
0.56
2.43
UNIT
°C/W
°C/W
°C/W
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 7
QW-R502-583.B
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