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MX1N5770

Isolated Diode Array with HiRel MQ, MX, MV, and MSP Screening Options

Microsemi Corporation 

SCOTTSDALE DIVISION

1N5770

Isolated Diode Array with

HiRel MQ, MX, MV, and MSP Screening Options

DESCRIPTION

These low capacitance diode arrays with common anode are multiple, discrete, isolated

junctions fabricated by a planar process and mounted in a 10-PIN package for use as

steering diodes protecting up to eight I/O ports from ESD, EFT, or surge by directing

them to ground (see figure 1). This circuit application is further complimented by the

1N5768 (separate data sheet) that has a common cathode. An external TVS diode may

be added between the positive supply line and ground to prevent overvoltage on the

supply rail. They may also be used in fast switching core-driver applications. This

includes computers and peripheral equipment such as magnetic cores, thin-film

memories, plated-wire memories, etc., as well as decoding or encoding applications.

These arrays offer many advantages of integrated circuits such as high-density

packaging and improved reliability. This is a result of fewer pick and place operations,

smaller footprint, smaller weight, and elimination of various discrete packages that may

not be as user friendly in PC board mounting.

IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com

APPEARANCE

10-PIN Ceramic

Flat Pack

FEATURES

• Hermetic Ceramic Package

• Isolated Diodes To Eliminate Cross-Talk Voltages

• High Breakdown Voltage VBR > 60 V at 10 μA

• Low Leakage IR< 100nA at 40 V

• Low Capacitance C < 8.0 pF

• Options for screening in accordance with MIL-PRF-

19500/474 for JAN, JANTX, JANTXV, and JANS are

available by adding MQ, MX, MV, or MSP prefixes

respectively to part numbers. For example, designate

MX1N5770 for a JANTX screen.

MAXIMUM RATINGS

• VBR Reverse Breakdown Voltage 60 V min (Notes 1 & 2)

• IO Continuous Forward Current 300 mA (Notes 1 & 3)

• IFSM Forward Surge Current (tp=1/120 s) 500 mA (Note 1)

• 400 mW Power Dissipation per Junction @ 25oC

• 500 mW Power Dissipation per Package @ 25oC (Note 4)

• Operating Junction Temperature range –65 to +150oC

• Storage Temperature range of –65 to +200oC

NOTE 1: Each Diode

NOTE 2: Pulsed: PW = 100 ms max; duty cycle <20%

NOTE 3: Derate at 2.4 mA/oC above +25oC

NOTE 4: Derate at 4.0 mW/oC above +25oC

APPLICATIONS / BENEFITS

• High Frequency Data Lines

• RS-232 & RS-422 Interface Networks

• Ethernet: 10 Base T

• Computer I/O Ports

• LAN

• Switching Core Drivers

• IEC 61000-4 Compatible (see circuit in figure 1)

61000-4-2 ESD : Air 15kV, contact 8kW

61000-4-4 (EFT) : 40A – 5/50 ns

61000-4-5 (surge): 12A 8/20 μs

MECHANICAL AND PACKAGING

• 10-PIN Ceramic Flat Pack

• Weight 0.25 grams (approximate)

• Marking: Logo, part number, date code and dot

identifying pin #1

• Carrier Tubes; 19 pcs (standard)

ELECTRICAL CHARACTERISTICS (Per Diode) @ 25oC unless otherwise specified

PART

NUMBER

1N5770

MAXIMUM

FORWARD

VOLTAGE

VF1

IF = 100 mA

(Note 1)

Vdc

1

MAXIMUM

FORWARD

VOLTAGE

VF2

IF = 500 mA

(Note 1)

Vdc

1.5

MAXIMUM

REVERSE

CURRENT

IR1

VR = 40 V

μAdc

0.1

MAXIMUM

CAPACITANCE

(PIN TO PIN)

Ct

VR = 0 V

F = 1 MHz

pF

8.0

MAXIMUM

FORWARD

RECOVERY TIME

tfr

IF = 500 mA

ns

40

MAXIMUM

REVERSE

RECOVERY TIME

trr

IF = IR = 200 mA

irr = 20 mA

RL = 100 ohms

ns

20

NOTE 1: Pulsed: PW = 300 µs +/- 50 µs, duty cycle <2%, 90 µs after leading edge.

Copyright © 2006

01-24-2006 REV B

Microsemi

Scottsdale Division

8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503

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