1N6101 Ver la hoja de datos (PDF) - Microsemi Corporation
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1N6101 Datasheet PDF : 2 Pages
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SCOTTSDALE DIVISION
1N6101
Isolated Diode Array with
HiRel MQ, MX, MV, and MSP Screening Options
DESCRIPTION
These low capacitance diode arrays are multiple, discrete, isolated junctions fabricated
by a planar process and mounted in a 16-PIN package for use as steering diodes
protecting up to eight I/O ports from ESD, EFT, or surge by directing them either to the
positive side of the power supply line or to ground (see figure 1). An external TVS diode
may be added between the positive supply line and ground to prevent overvoltage on
the supply rail. They may also be used in fast switching core-driver applications. This
includes computers and peripheral equipment such as magnetic cores, thin-film
memories, plated-wire memories, etc., as well as decoding or encoding applications.
These arrays offer many advantages of integrated circuits such as high-density
packaging and improved reliability. This is a result of fewer pick and place operations,
smaller footprint, smaller weight, and elimination of various discrete packages that may
not be as user friendly in PC board mounting.
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
APPEARANCE
16-PIN Ceramic DIP
FEATURES
APPLICATIONS / BENEFITS
• Hermetic Ceramic Package
• Isolated Diodes to Eliminate Cross-Talk Voltages
• High Breakdown Voltage VBR > 75 V at 5 µA
• Low Leakage IR< 100nA at 40 V
• Low Capacitance C < 4.0 pF
• Switching Speeds less than 10 ns
• Options for screening in accordance with MIL-PRF-
19500/474 for JAN, JANTX, JANTXV, and JANS are
available by adding MQ, MX, MV, or MSP prefixes
respectively to part numbers. For example, designate
MX1N6101 for a JANTX screen.
• High Frequency Data Lines
• RS-232 & RS-422 Interface Networks
• Ethernet: 10 Base T
• Computer I/O Ports
• LAN
• Switching Core Drivers
• IEC 61000-4 Compatible (see circuit in figure 1)
61000-4-2 ESD: Air 15 kV, contact 8 kW
61000-4-4 (EFT): 40 A – 5/50 ns
61000-4-5 (surge): 12 A 8/20 µs
MAXIMUM RATINGS
MECHANICAL AND PACKAGING
• Reverse Breakdown Voltage of 75 Vdc (Note 1 & 2)
• Continuous Forward Current of 300 mA dc (Note 1 & 3)
• Peak Surge Current (tp=1/120 s) of 500 mA dc (Note 1)
• 400 mW Power Dissipation per Junction @ 25oC
• 600 mW Power Dissipation per Package @ 25oC (Note 4)
• Operating Junction Temperature range –65 to +150oC
• Storage Temperature range of –65 to +200oC
• 16-PIN Ceramic DIP
• Weight 2.09 grams (approximate)
• Marking: Logo, part number, date code
• Pin #1 to the left of the indent on top of
package
• Carrier Tubes; 25 pcs (standard)
NOTE 1: Each Diode
NOTE 2: Pulsed: PW = 100 ms max; duty cycle <20%
NOTE 3: Derate at 2.4 mA/oC above +25oC
NOTE 4: Derate at 4.8 mW/oC above +25oC
ELECTRICAL CHARACTERISTICS (Per Diode) @ 25oC unless otherwise specified
PART
NUMBER
1N6101
MAXIMUM
FORWARD
VOLTAGE
VF1
IF = 100 mA
(Note 1)
V
1
MAXIMUM
REVERSE
CURRENT
IR1
VR = 40 V
µA
0.1
MAXIMUM
REVERSE
CURRENT
IR2
VR = 20 V
nA
25
MAXIMUM
CAPACITANCE
(PIN TO PIN)
Ct
VR = 0 V
F = 1 MHz
pF
4.0
MAXIMUM
FORWARD
RECOVERY
TIME
tfr
IF = 100 mA
ns
15
MAXIMUM
REVERSE
RECOVERY TIME
trr
IF = IR = 10 mAdc
irr = 1 mAdc
RL = 100 ohms
ns
10
NOTE 1: Pulsed: PW = 300 µs +/- 50 µs, duty cycle <2%, 90 µs after leading edge.
MAXIMUM
FORWARD
VOLTAGE
MATCH
VF5
IF = 10 mA
mV
5
Copyright 2003
5-03-2004 REV A
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
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