1N6820R Ver la hoja de datos (PDF) - Microsemi Corporation

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1N6820R

LOW REVERSE LEAKAGE SCHOTTKY DIODE

Microsemi Corporation 

2830 S. Fairview St.

Santa Ana, CA 92704

PH: (714) 979-8220

FAX: (714) 966-5256

1N6820

(MSASC75W100F)

PRELIMINA1NR682Y0R Features

• Tungsten schottky barrier for low VF

• Oxide passivated structure for very low leakage currents

• Guard ring protection for increased reverse energy capability

(MSASC75W100FR)

• Epitaxial structure minimizes forward voltage drop

• Hermetically sealed, low profile ceramic surface mount power package

• Low package inductance

100 Volts

• Very low thermal resistance

• Available as standard polarity (strap is anode: 1N6820) and reverse

75 Amps

polarity (strap is cathode: 1N6820R)

LOW REVERSE

Maximum Ratings @ 25°C (unless otherwise specified)

LEAKAGE

SCHOTTKY DIODE

DESCRIPTION

SYMBOL

MAX.

UNIT

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

Average Rectified Forward Current, Tc≤125°C

derating, forward current, Tc≥ 125°C

Nonrepetitive Peak Surge Current, tp= 8.3 ms, half-sinewave

Peak Repetitive Reverse Surge Current, tp= 1µs, f= 1kHz

Junction Temperature Range

Storage Temperature Range

Thermal Resistance, Junction to Case:

1N6820

1N6820R

VRRM

VRWM

VR

IF(ave)

dIF/dT

IFSM

IRRM

Tj

Tstg

θJC

45

45

45

75

4

500

2

-55 to +150

-55 to +150

0.50

0.65

Volts

Volts

Volts

Amps

Amps/°C

Amps

Amp

°C

°C

°C/W

Mechanical Outline

ThinKey™ 4

Datasheet# MSC1031A

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