1N6821R Ver la hoja de datos (PDF) - Microsemi Corporation

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1N6821R

LOW VOLTAGE DROP SCHOTTKY DIODE

Microsemi Corporation 

2830 S. Fairview St.

Santa Ana, CA 92704

PH: (714) 979-8220

FAX: (714) 966-5256

1N6821

(MSASC150H45L)

Features

• Tungsten/Platinum schottky barrier

1N6821R

• Oxide passivated structure for very low leakage currents

• Guard ring protection for increased reverse energy capability

(MSASC150H45LR)

• Epitaxial structure minimizes forward voltage drop

• Hermetically sealed, low profile ceramic surface mount power package

• Low package inductance

45 Volts

• Very low thermal resistance

• Available as standard polarity (strap-to-anode, 1N6821) and reverse

150 Amps

polarity (strap-to-cathode: 1N6821R)

LOW VOLTAGE

Maximum Ratings @ 25°C (unless otherwise specified)

DROP SCHOTTKY

DIODE

DESCRIPTION

SYMBOL

MAX.

UNIT

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

Average Rectified Forward Current, Tc≤125°C

derating, forward current, Tc≥ 125°C

Nonrepetitive Peak Surge Current, tp= 8.3 ms, half-sinewave

Peak Repetitive Reverse Surge Current, tp= 1µs, f= 1kHz

Junction Temperature Range

Storage Temperature Range

Thermal Resistance, Junction to Case:

1N6821

1N6821R

VRRM

VRWM

VR

IF(ave)

dIF/dT

IFSM

IRRM

Tj

Tstg

θJC

45

45

45

150

4

750

2

-55 to +150

-55 to +150

0.20

0.35

Volts

Volts

Volts

Amps

Amps/°C

Amps

Amp

°C

°C

°C/W

Mechanical Outline

ThinKey™ 3

Datasheet# MSC1035A

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