1SS309 Ver la hoja de datos (PDF) - Toshiba
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1SS309 Datasheet PDF : 3 Pages
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TOSHIBA Diode Silicon Epitaxial Planar Type
1SS309
1SS309
Ultra High Speed Switching Applications
Unit: mm
z Small package
: SC-74A
z Low forward voltage
: VF (3) = 0.90V (typ.)
z Fast reverse recovery time : trr = 1.6ns (typ.)
z Small total capacitance : CT = 0.9pF (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Maximum (peak) reverse voltage
VRM
85
V
Reverse voltage
VR
80
V
Maximum (peak) forward current
Average forward current
Surge current (10ms)
Power dissipation
IFM
IO
IFSM
P
300 (*)
mA
100 (*)
mA
2 (*)
A
200
mW
Junction temperature
Tj
125
°C
Storage temperature
Tstg
−55∼125
°C
JEDEC
―
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
EIAJ
TOSHIBA
SC−74A
1−3H1B
reliability significantly even if the operating conditions (i.e. operating Weight: 0.014g
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
(*) Unit rating. Total rating = unit rating × 1.5
Electrical Characteristics (Ta = 25°C)
Characteristic
Forward voltage
Reverse current
Total capacitance
Symbol
VF (1)
VF (2)
VF (3)
IR (1)
IR (2)
CT
Test
Circuit
Test Condition
― IF = 1mA
― IF = 10mA
― IF = 100mA
― VR = 30V
― VR = 80V
― VR = 0, f = 1MHz
Reverse recovery time
trr
― IF = 10mA, Fig.1
Min Typ. Max Unit
― 0.60 ―
― 0.72 ―
V
― 0.90 1.20
―
―
0.1
μA
―
―
0.5
―
0.9
3.0
pF
―
1.6
4.0
ns
Marking
1
2007-11-01
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