CMM0014-BD Ver la hoja de datos (PDF) - Celeritek, Inc.
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CMM0014-BD Datasheet PDF : 2 Pages
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CMM0014-BD
2.0 to 22.0 GHz
GaAs MMIC
Power Amplifier
Chip Diagram
Advanced Product Information
October 2003
(1 of 2)
Features
❏ Small Size: 45 x 92 mils
❏ High Gain: 11.5 dB
❏ Medium Power: +25 dBm, Typ P1dB
❏ Directly Cascadable – Fully Matched
❏ Unconditionally Stable
❏ Single Supply
❏ Bias Control
❏ pHEMT Technology
❏ Silicon Nitride Passivation
Specifications (TA = 25°C, Vdd = 8V)
Parameters
Units
Min
Typ
Max
Frequency Range
GHz
2.0
22.0
Small Signal Gain
dB
10.0
13.5
Gain Flatness
±dB
1.6
Return Loss
dB
-10
P1dB Variation (over operating frequency)
dBm
4.5
Power Output (@1 dB Gain Compression) 1
dBm
22.5
27.5
Saturated Output Power
dBm
24.0
29.0
Second Order Intercept Point
dBm
40.0
Third Order Intercept Point
dBm
30.0
Current
Stability 2
mA
250
300
350
Unconditionally Stable
Notes: 1. Power may be increased by 1 dB if Bias of 7V and 350 mA is used (all source resistors bonded to ground).
2. Stability factor measured on-wafer.
Absolute Maximum Ratings
Parameter
Drain Voltage
Drain Current
Continuous Power Dissipation
Channel Temperature
Storage Temperature
Mounting Temperature
Input Power
Rating
12V
375 mA
3.0 W
+175°C
-65°C to +175°C
+320°C
+23 dBm
Die Attach and Bonding Procedures
Die Attach: Eutectic die attach is recommended. For eutec-
tic die attach: Preform: AuSn (80% Au, 20% Sn); Stage
Temperature: 290°C, ±5°C; Handling Tool: Tweezers; Time: 1
min or less.
Wire Bonding: Wire Size: 0.7 to 1.0 mil in diameter (pre-
stressed); Thermocompression bonding is preferred over
thermosonic bonding. For thermocompression bonding:
Stage Temperature: 250°C; Bond Tip Temperature: 150°C;
Bonding Tip Pressure: 18 to 40 gms depending on size of
wire.
3236 Scott Boulevard
Santa Clara, California 95054
Phone: (408) 986-5060
Fax: (408) 986-5095
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