20ETS08FP Ver la hoja de datos (PDF) - Vishay Semiconductors
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20ETS08FP Datasheet PDF : 7 Pages
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20ETS..FPPbF High Voltage Series
Vishay High Power Products Input Rectifier Diode, 20 A
ELECTRICAL SPECIFICATIONS
PARAMETER
Maximum forward voltage drop
Forward slope resistance
Threshold voltage
Maximum reverse leakage current
SYMBOL
VFM
rt
VF(TO)
IRM
TEST CONDITIONS
20 A, TJ = 25 °C
TJ = 150 °C
TJ = 25 °C
TJ = 150 °C
VR = Rated VRRM
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum junction and storage temperature range
Maximum thermal resistance,
junction to case
TJ, TStg
RthJC
DC operation
Maximum thermal resistance,
junction to ambient
Typical thermal resistance,
case to heatsink
RthJA
RthCS
Mounting surface, smooth and greased
Approximate weight
Mounting torque
Marking device
minimum
maximum
Case style TO-220 FULL-PAK (94/V0)
VALUES
1.1
10.4
0.85
0.1
1.0
UNITS
V
mΩ
V
mA
VALUES
- 40 to 150
2.8
UNITS
°C
62
°C/W
0.5
2
g
0.07
oz.
6.0 (5.0)
12 (10)
kgf · cm
(lbf · in)
20ETS08FP
20ETS12FP
www.vishay.com
2
For technical questions, contact: diodes-tech@vishay.com
Document Number: 94339
Revision: 04-Aug-08
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