2N2327 Ver la hoja de datos (PDF) - Comset Semiconductors
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2N2327 Datasheet PDF : 3 Pages
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2N2327 thur 2N2329
ELECTRICAL CHARACTERISTICS (*)
TJ=25°C unless otherwise noted, RGK=1000Ω
Symbol
Ratings
2N2327 2N2328 2N2329
VDRM
IRRM
IDRM
VT
IGT
VGT
IH
Peak Forward Blocking Voltage
(1)
Min :
250
300
400
Peak Reverse Blocking Current
(Rated VDRM, TJ =125°C)
Peak Forward Blocking Current
(Rated VDRM, TJ =125°C)
Forward « on » Voltage
IT =1.0 A Peak
IT =1.0 A Peak
TC =85°C
Gate Trigger Current (2)
Anode Voltage=6.0 Vdc, RL=100Ω
Anode Voltage=6.0 Vdc, RL=100Ω
TC=-65°C
Gate Trigger Voltage
Anode Voltage=6.0 V, RL=100Ω
Anode Voltage=6.0 V, RL=100Ω
TC=-65°C
VDRM = Rated, RL=100Ω
TJ=125°C
Holding Current
Anode Voltage=6.0 V
Max : 100
Max : 100
Max : 1.5
Max : 2.0
Max : 200
Max : 350
Max : 0.8
Max : 1.0
Min : 0.1
Max : 2.0
Anode Voltage=6.0 V
TC=-65°C
Anode Voltage=6.0 V
TC=125°C
Max : 3.0
Min : 0.15
(*) JEDEC Registered Values
(1) VRSM and VDRM can be applied for all types on a continuous dc basis without incurring damage.
(2) RGK current is not included in measurement.
Unit
V
µA
µA
V
µA
V
mA
12/11/2012
COMSET SEMICONDUCTORS
2|3
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