2N6760(Rev1) Ver la hoja de datos (PDF) - Microsemi Corporation
Número de pieza
componentes Descripción
Lista de partido
2N6760 Datasheet PDF : 3 Pages
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6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
TECHNICAL DATA SHEET
N-CHANNEL MOSFET
Qualified per MIL-PRF-19500/542
DYNAMIC CHARACTERISTICS
Parameters / Test Conditions
Gate Charge:
On-State Gate Charge
Gate to Source Charge
Gate to Drain Charge
SWITCHING CHARACTERISTICS
Parameters / Test Conditions
Switching time tests:
Turn-on delay time
Rinse time
Turn-off delay time
Fall time
Diode Reverse Recovery Time
VGS = 10V, ID = 5.5A
VDS = 320V
Symbol
Qg(on)
Qgs
Qgd
ID = 5.5A, VGS = 10Vdc,
Gate drive impedance = 7.5Ω,
VDD = 200Vdc
di/dt ≤ 100A/µs, VDD ≤ 30V,
IF = 5.5A
Symbol
td(on)
tr
td(off)
tf
trr
Min.
Min.
Max.
Unit
39
6.0
nC
20
Max.
Unit
30
40
ns
80
35
700
ns
T4-LDS-0152 Rev. 1 (092090)
Page 2 of 3
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