2SA1171 Ver la hoja de datos (PDF) - Hitachi -> Renesas Electronics

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2SA1171

Silicon PNP Epitaxial

Hitachi -> Renesas Electronics 

2SA1171

Absolute Maximum Ratings (Ta = 25°C)

Item

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current

Collector power dissipation

Junction temperature

Storage temperature

Symbol

VCBO

VCEO

VEBO

IC

PC

Tj

Tstg

Ratings

Unit

–90

V

–90

V

–5

V

–50

mA

150

mW

150

°C

–55 to +150

°C

Electrical Characteristics (Ta = 25°C)

Item

Symbol Min Typ

Collector to emitter breakdown V(BR)CEO –90 —

voltage

Collector cutoff current

I CBO

—

—

DC current transfer ratio

hFE* 1

250 —

Base to emitter voltage

VBE

—

—

Collector to emitter saturation VCE(sat)

—

—

voltage

Gain bandwidth product

fT

—

200

Collector output capacitance Cob

—

1.6

Note: 1. The 2SA1171 is grouped by hFE as follows.

Grade

D

E

Mark

PD

PE

hFE

250 to 500 400 to 800

Max

—

Unit

V

Test conditions

IC = –1 mA, RBE = ∞

–0.5 µA

800

–0.75 V

–0.5 V

VCB = –75 V, IE = 0

VCE = –12 V, IC = –2 mA

VCE = –12 V, IC = –2 mA

IC = –10 mA, IB = –1 mA

—

MHz VCE = –12 V, IC = –2 mA

—

pF

VCB = –25 V, IE = 0, f = 1 MHz

See characteristic curves of 2SA872.

2

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