A1232 Ver la hoja de datos (PDF) - Inchange Semiconductor

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A1232

Silicon PNP Power Transistors

Inchange Semiconductor 

Inchange Semiconductor

Silicon PNP Power Transistors

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

VCEsat Collector-emitter saturation voltage IC=-5A; IB=-0.5A

VBEsat Base-emitter saturation voltage

IC=-5A; IB=-0.5A

ICBO

Collector cut-off current

VCB=-130V; IE=0

IEBO

Emitter cut-off current

VEB=-3V; IC=0

hFE-1

DC current gain

IC=-2A ; VCE=-5V

hFE-2

DC current gain

IC=-5A ; VCE=-5V

Cob

Output capacitance

IE=0 ; VCB=-10V;f=1MHz

fT

Transition frequency

IC=-1A ; VCE=-5V

‹ hFE-1 Classifications

R

Q

P

60-120 100-200 160-320

Product Specification

2SA1232

MIN TYP. MAX UNIT

-0.6 -1.5

V

-1.3 -2.0

V

-50 μA

-50 μA

60

320

40

250

pF

60

MHz

2

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