A1264 Ver la hoja de datos (PDF) - Inchange Semiconductor

Número de pieza

componentes Descripción

Lista de partido

A1264

Silicon PNP Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon PNP Power Transistor

isc Product Specification

2SA1264

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN TYP. MAX UNIT

V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA; IB= 0

-120

V

VCE(sat) Collector-Emitter Saturation Voltage IC= -6A; IB= -0.6A

VBE(on)

Base-Emitter On Voltage

IC= -4A ; VCE= -5V

ICBO

Collector Cutoff Current

VCB= -120V; IE= 0

-2.0 V

-1.5 V

-5 μ A

IEBO

Emitter Cutoff Current

VEB= -5V; IC= 0

-5 μ A

hFE-1

DC Current Gain

IC= -1A; VCE= -5V

55

160

hFE-2

DC Current Gain

IC= -4A; VCE= -5V

35

COB

Output Capacitance

IE=0; VCB= -10V; ftest= 1.0MHz

fT

Current-Gain—Bandwidth Product

IC=-1A; VCE= -5V

420

pF

30

MHz

 hFE-1 Classifications

R

O

55-110 80-160

isc website：www.iscsemi.cn

2 isc & iscsemi is registered trademark

Share Link: