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2SA1987
(Rev.:2013)

TOSHIBA Transistor Silicon PNP Triple Diffused Type

Toshiba 

Electrical Characteristics (Tc = 25°C)

Characteristics

Symbol

Test Condition

Collector cut-off current

Emitter cut-off current

Collector-emitter breakdown voltage

DC current gain

Collector-emitter saturation voltage

Base-emitter voltage

Transition frequency

Collector output capacitance

ICBO

VCB = −230 V, IE = 0

IEBO

VEB = −5 V, IC = 0

V (BR) CEO IC = −50 mA, IB = 0

hFE (1)

VCE = −5 V, IC = −1 A

(Note 1)

hFE (2)

VCE (sat)

VBE

fT

Cob

VCE = −5 V, IC = −7 A

IC = −8 A, IB = −0.8 A

VCE = −5 V, IC = −7 A

VCE = −5 V, IC = −1 A

VCB = −10 V, IE = 0, f = 1 MHz

Note 1:hFE (1) classification R: 55 to 110, O: 80 to 160

Marking

2SA1987

Min Typ. Max Unit

―

― −5.0 μA

―

― −5.0 μA

−230 ―

―

V

55

―

160

35

70

―

― −1.5 −3.0

V

― −1.0 −1.5

V

―

30

― MHz

― 360 ―

pF

TOSHIBA

2SA1987

JAPAN

Part No. (or abbreviation code)

Lot No.

Note 2

Note 2: A line under a Lot No. identifies the indication of product Labels.

Not underlined : [[Pb]]/INCLUDES > MCV

Underlined : [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]

Please contact your TOSHIBA sales representative for details as to environmental

matters such as the RoHS compatibility of Product.

The RoHS is the Directive 2011/65/EU of the European Parliament and of the

Council of 8 June 2011 on the restriction of the use of certain hazardous substances

in electrical and electronic equipment.

2

2013-11-01

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