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Lista de partido

2SA673AKCTZ-E

Silicon PNP Epitaxial

Renesas Electronics 

2SA673A(K)

Collector to Emitter Saturation

Voltage vs. Collector Current

–0.7

–0.6 IC = 10 IB

–0.5

–0.4

–0.3

–0.2

–0.1

0

–0.1 –0.2 –0.5 –1.0 –2 –5 –10 –20 –50 –100 –200 –500

Collector Current IC (mA)

Base to Emitter Saturation Voltage vs.

Collector Current

–1.1

–1.0 IC = 10 IB

–0.9

–0.8

–0.7

–25

0

–0.6

–0.5

25

Ta =5705°C

–0.4

–0.1 –0.2 –0.5 –1.0 –2 –5 –10 –20 –50 –100 –200 –500

Collector Current IC (mA)

Switching Time Test Circuit

ton, toff Test Circuit

P.G.

tr, tf ≤ 15 ns

PW 5 μs

duty ratio ≤ 10%

D.U.T.

6k

6k

50 0.002 0.002

CRT

1k

+–

6 V 50

+–

50 –10.3 V

Unit R : Q

C : μF

0

Input

–13 V

0

Output

Response Waveform

10%

90%

10%

ton

90%

toff

Preliminary

Base to Emitter Saturation Voltage vs.

Collector Current

–1.1

–1.0 IC = 10 IB

–0.9

–0.8

–0.7

–25

0

–0.6

–0.5

25

Ta =5705°C

–0.4

–0.1 –0.2 –0.5 –1.0 –2 –5 –10 –20 –50 –100 –200 –500

Collector Current IC (mA)

Switcing Time vs. Collector Current

1,000

500

VCC = –10.3 V

IC = 10 IB1 = –10 IB2

toff

200

tstg

100

50

ton

20

td

10

–5 –10 –20 –50 –100 –200 –500

Collector Current IC (mA)

Switching Time Test Circuit

tstg Test Circuit

P.G.

tr ≤ 5 ns

PW 5 μs

duty ratio ≤ 2%

D.U.T.

1.0 215

200 100

0.002

–+

–7 V 50

0.002

+–

50

CRT

240

–5 V

Unit R : Q

C : μF

Response Waveform

9V

Input

0

0

Output

10%

10%

tstg

R07DS0430EJ0400 Rev.4.00

Jun 07, 2011

Page 4 of 5

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